DatasheetsPDF.com

TSM60NB150CF

Part Number	TSM60NB150CF
Manufacturer	Taiwan Semiconductor
Description	N-Channel Power MOSFET
Published	Jun 23, 2019
Detailed Description	TSM60NB150CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 24A, 150mΩ FEATURES ● Super-Junction technology ● High ...
Datasheet	TSM60NB150CF PDF File

Overview

TSM60NB150CF Taiwan Semiconductor N-Channel Power MOSFET 600V, 24A, 150mΩ FEATURES ● Super-Junction technology ● High performance, small RDS(ON)*Qg figure of merit (FOM) ● High ruggedness performance ● 100% UIS and Rg tested ● Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 KEY PERFORMANCE PARAMETERS PARAMETER VALUE UNIT VDS RDS(on) (max) Qg 600 150 43 V mΩ nC APPLICATIONS ● PFC Stage ● Power Supply ● AC/DC LED Lighting ITO-220S ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL LIMIT Drain-Source Voltage Gate-Source Voltage Continuous Drain Current (Note 1) Pulsed Drain Current (Note 2) TC = 25°C TC = 100°C Total Power Dissipation @ TC = 25°C Single Pulse Avalanche Energy (Note 3) Single Pulse Avalanche Current (Note 3) Operating Junction and Storage Temperature Range VDS VGS ID IDM PD EAS IAS TJ, TSTG 600 ±30 24 15 72 62.
5 441 4.
2 - 55 to +1...

Similar Datasheet

TSM60NB150CF N-Channel Power MOSFET - Taiwan Semiconductor

@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)