DatasheetsPDF.com

HM4853B

H&M Semiconductor
Part Number HM4853B
Manufacturer H&M Semiconductor
Description P-Channel Enhancement Mode Power MOSFET
Published Jun 24, 2019
Detailed Description HM4853B P-Channel Enhancement Mode Power MOSFET Description The HM4853B uses advanced trench technology to provide exce...
Datasheet PDF File HM4853B PDF File

HM4853B
HM4853B

Overview
HM4853B P-Channel Enhancement Mode Power MOSFET Description The HM4853B uses advanced trench technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.
5V.
This device is suitable for use as a load switch or in PWM applications.
D1 G1 G2 D2 S1 S2 Schematic diagram General Features ● VDS = -12V,ID = -8A RDS(ON) < 30mΩ @ VGS=-4.
5V RDS(ON) < 45mΩ @ VGS=-2.
5V ● High power and current handing capability ● Lead free product is acquired ● Surface Mount Package Application ● Motor drive ● Load switch ● Power management HM4853B Marking and pin assignment SOP-8 top view Package Marking And Ordering Information Device Marking Device Device Package ...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)