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MUR20010CTR

GeneSiC
Part Number MUR20010CTR
Manufacturer GeneSiC
Description Silicon Super Fast Recovery Diode
Published Jun 27, 2019
Detailed Description Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive ...
Datasheet PDF File MUR20010CTR PDF File

MUR20010CTR
MUR20010CTR

Overview
Silicon Super Fast Recovery Diode Features • High Surge Capability • Types from 50 V to 200 V VRRM • Not ESD Sensitive MUR20005CT thru MUR20020CTR VRRM = 50 V - 200 V IF(AV) = 200 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 50 35 50 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 200 140 200 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MUR20005CT (R) MUR20010CT (R) MUR20020CT (R) Unit Average forward current (per pkg) Peak forward surge current (per leg) Maximum instantaneous forward voltage (per leg) Maximum reverse current at rated DC blocking voltage (per leg) Maximum reverse recovery...


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