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MBRT12060R

GeneSiC
Part Number MBRT12060R
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 27, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Isolation Type Package •...
Datasheet PDF File MBRT12060R PDF File

MBRT12060R
MBRT12060R

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Isolation Type Package • Electrically Isolated Base Plate • Not ESD Sensitive MBRT12045 thru MBRT120100R VRRM = 45 V - 100 V IF(AV) = 120 A Three Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRT12045(R) MBRT12060(R) MBRT12080(R) MBRT120100(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 56 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -5...


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