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MBR300100CT

GeneSiC
Part Number MBR300100CT
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 27, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30...
Datasheet PDF File MBR300100CT PDF File

MBR300100CT
MBR300100CT

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 45 V to 100 V VRRM • Not ESD Sensitive MBR30045CT thru MBR300100CTR VRRM = 45 V - 100 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 45 32 45 -55 to 150 -55 to 150 60 42 60 -55 to 150 -55 to 150 80 57 80 -55 to 150 -55 to 150 100 70 100 -55 to 150 -55 to 150 V V V °C °C Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR30045CT(R) MBR30060CT(R) MBR30080CT(R) MBR300100CT(R) Unit Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM TC = 125 °C tp = 8.
3 ms, half sine Maximum forward voltage (per leg) ...


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