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MBRH240200R

GeneSiC
Part Number MBRH240200R
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 27, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRH...
Datasheet PDF File MBRH240200R PDF File

MBRH240200R
MBRH240200R

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBRH240150 thru MBRH240200R VRRM = 150 V - 200 V IF(AV) = 240 A D-67 Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBRH240150(R) MBRH240200(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 150 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBRH240150(R) Average forward current (per pkg) IF(AV) TC = 125 °C 240 Peak forward surge current IFSM tp = 8.
3 ms, half sine 3300 Maximum instantaneous forward voltage Maximum instantaneous reverse current at rated DC blocking voltage Thermal characteristics Thermal resistance, junctioncase VF IR RΘJC IFM = 240 A, Tj = ...


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