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MBR300150CTR

GeneSiC
Part Number MBR300150CTR
Manufacturer GeneSiC
Description Silicon Power Schottky Diode
Published Jun 27, 2019
Detailed Description Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBR3...
Datasheet PDF File MBR300150CTR PDF File

MBR300150CTR
MBR300150CTR

Overview
Silicon Power Schottky Diode Features • High Surge Capability • Types from 150 V to 200 V VRRM • Not ESD Sensitive MBR300150CT thru MBR300200CTR VRRM = 150 V - 200 V IF(AV) = 300 A Twin Tower Package Maximum ratings, at Tj = 25 °C, unless otherwise specified ("R" devices have leads reversed) Parameter Symbol Conditions MBR300150CT(R) MBR300200CT(R) Repetitive peak reverse voltage RMS reverse voltage DC blocking voltage Operating temperature Storage temperature VRRM VRMS VDC Tj Tstg 150 106 150 -55 to 150 -55 to 150 200 141 200 -55 to 150 -55 to 150 Electrical characteristics, at Tj = 25 °C, unless otherwise specified Parameter Symbol Conditions MBR300150CT(R) Average forward current (per pkg) Peak forward surge current (per leg) IF(AV) IFSM Maximum forward voltage (per leg) VF Reverse current at rated DC blocking voltage (per leg) IR Thermal characteristics Thermal resistance, junction-case (per leg) RΘJC TC = 125 °C tp = 8.
3 ms, half sine IFM = 150 ...


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