Part Number | RA30H4452M1A |
Manufacturer | Mitsubishi |
Description | Silicon RF Power Modules |
Features | • Enhancement-Mode MOSFET (IDD 0 @ VDD=12.5V, VGG1=0V, VGG2=0V) • Pout>30W, T>40% @ VDD=12.5V, VGG1=3.4V,VGG2=5V, Pin=50... |
Published | Jun 27, 2019 |
Datasheet | RA30H4452M1A PDF File |