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GTVA262701FA

Part Number	GTVA262701FA
Manufacturer	Wolfspeed
Description	Thermally-Enhanced High Power RF GaN on SiC HEMT
Published	Jun 28, 2019
Detailed Description	GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA...
Datasheet	GTVA262701FA PDF File

Overview

GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT 270 W, 48 V, 2620 – 2690 MHz Description The GTVA262701FA is a 270-watt GaN on SiC high electron mobility transistor (HEMT) for use in multi-standard cellular power amplifier applications.
It features input matching, high efficiency, and a thermally-enhanced surface-mount package with earless flange.
GTVA262701FA Package H-87265J-2 Peak/Average Ratio, Gain (dB) Efficiency (%) Single-carrier WCDMA Drive-up VDD = 48 V, IDQ = 320 mA, ƒ = 2690 MHz.
3GPP WCDMA signal, 10 dB PAR, 3.
84 MHz bandwidth 24 20 Gain 16 Efficiency 60 40 20 12 0 8 PAR @ 0.
01% CCDF -20 4 -40 Features • GaN on SiC HEMT technology • Input matched • T...

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GTVA262701FA Thermally-Enhanced High Power RF GaN on SiC HEMT - Wolfspeed

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