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RFD14N05

HARRIS
Part Number RFD14N05
Manufacturer HARRIS
Description Avalanche Rated N-Channel Enhancement-Mode Power MOSFET
Published Jul 2, 2019
Detailed Description SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power...
Datasheet PDF File RFD14N05 PDF File

RFD14N05
RFD14N05

Overview
SEMICONDUCTOR RFD14N05, RFD14N05SM, RFP14N05 December 1995 14A, 50V, Avalanche Rated N-Channel Enhancement-Mode Power MOSFETs Features Packaging • 14A, 50V • rDS(ON) = 0.
100Ω • Temperature Compensating PSPICE Model • Peak Current vs Pulse Width Curve JEDEC TO-220AB DRAIN (FLANGE) SOURCE DRAIN GATE • UIS Rating Curve • +175oC Operating Temperature Description The RFD14N05, RFD14N05SM, and RFP14N05 N-channel power MOSFETs are manufactured using the MegaFET process.
This process which uses feature sizes approaching those of LSI integrated circuits, gives optimum utilization of silicon, resulting in outstanding performance.
They were designed for use in applications such as switching regulators, switching converters, motor drivers, and relay drivers.
These transistors can be operated directly from integrated circuits.
JEDEC TO-251AA DRAIN (FLANGE) SOURCE DRAIN GATE JEDEC TO-252AA DRAIN (FLANGE) PACKAGING AVAILABILITY PART NUMBER PACKAGE BRAND GATE SOURCE RFD14N05 RFD14N05SM RFP14N05 TO-251AA TO-252AA TO-220AB F14N05 F14N05 RFP14N05 Symbol D NOTE: When ordering, use the entire part number.
Add the suffix 9A to obtain the TO-252AA variant in the tape and reel, i.
e.
, RFD14N05SM9A.
G Formerly developmental type TA09770.
S Absolute Maximum Ratings TC = +25oC Drain-Source Voltage.
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VDSS Drain-Gate Voltage .
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VDGR Gate-Source Voltage .
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VGS Drain Current RMS Continuous .
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ID Pulsed Drain Current .
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IDM Pulsed Avalanche Rating .
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