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MJD44H11A

nexperia
Part Number MJD44H11A
Manufacturer nexperia
Description 8A NPN high power bipolar transistor
Published Jul 3, 2019
Detailed Description MJD44H11A 80 V, 8 A NPN high power bipolar transistor 28 May 2019 Preliminary data sheet 1. General description NPN ...
Datasheet PDF File MJD44H11A PDF File

MJD44H11A
MJD44H11A

Overview
MJD44H11A 80 V, 8 A NPN high power bipolar transistor 28 May 2019 Preliminary data sheet 1.
General description NPN high power bipolar transistor in a power SOT428 Surface-Mounted Device (SMD) plastic package.
PNP complement: MJD45H11A 2.
Features and benefits • High thermal power dissipation capability • High energy efficiency due to less heat generation • Electrically similar to popular MJD44H series • Low collector emitter saturation voltage • Fast switching speeds • AEC-Q101 qualified 3.
Applications • Power management • Load switch • Linear mode voltage regulator • Constant current drive backlighting application • Motor drive • Relay replacement 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VCEO collector-emitter voltage IC collector current ICM peak collector current hFE DC current gain Conditions single pulse; tp ≤ 1 ms VCE = 1 V; IC = 2 A; Tamb = 25 °C Min Typ Max Unit - - 80 V --60 - 8A 16 A - Nexperia MJD44H11A 80 V, 8 A NPN high ...


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