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PSMN3R5-30YL

nexperia
Part Number PSMN3R5-30YL
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 3, 2019
Detailed Description PSMN3R5-30YL N-channel 30 V 3.5 mΩ logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1. General descripti...
Datasheet PDF File PSMN3R5-30YL PDF File

PSMN3R5-30YL
PSMN3R5-30YL

Overview
PSMN3R5-30YL N-channel 30 V 3.
5 mΩ logic level MOSFET in LFPAK 3 August 2018 Product data sheet 1.
General description Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
This product is designed and qualified for use in industrial and communications applications.
2.
Features and benefits • High efficiency due to low switching and conduction losses • Suitable for logic level gate drive sources 3.
Applications • Class-D amplifiers • DC-to-DC converters • Motor control • Server power supplies 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD gate-drain charge QG(tot) total gate charge Avalanche ruggedness EDS(AL)S non-repetitive drainsource avalanche energy Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig.
2 Tmb...


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