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2SK1284-Z

Kexin
Part Number 2SK1284-Z
Manufacturer Kexin
Description N-Channel MOSFET
Published Jul 3, 2019
Detailed Description SMD Type N-Channel MOSFET 2SK1284-Z MOSFICET Features Low on-state resistance RDS(on) 0.32 .@VGS=10V,ID=2A RDS(on) 0....
Datasheet PDF File 2SK1284-Z PDF File

2SK1284-Z
2SK1284-Z

Overview
SMD Type N-Channel MOSFET 2SK1284-Z MOSFICET Features Low on-state resistance RDS(on) 0.
32 .
@VGS=10V,ID=2A RDS(on) 0.
40 @VGS=4V,ID=2A Low Ciss Ciss=500pF TYP.
Built-in G-S Gate Protection Diode +9.
70 0.
2 -0.
2 TO-252 6.
50+0.
15 -0.
15 5.
30+0.
2 -0.
2 2.
30 +0.
1 -0.
1 0.
50 +0.
8 -0.
7 Unit: mm +1.
50 0.
15 -0.
15 3.
80 +5.
55 0.
15 -0.
15 + 0.
150 .
5 0 -0.
15 + 0.
281 .
5 0 -0.
1 0.
80+0.
1 -0.
1 0.
127 m ax 2.
3 4 .
60 +0.
15 -0.
15 0.
60+ 0.
1 - 0.
1 + 0.
252 .
6 5 -0.
1 1 Gate 2 Drain 3 Source Absolute Maximum Ratings Ta = 25 Parameter Drain to source voltage Gate to source voltage Drain current (DC) Pulsed Drain Current * Power dissipation TC=25 TA=25 Junction Temperature Storage temperature * PW 10 us, duty cycle 5% Symbol VDSS VGSS ID IDM PD Tj Tstg Rating 100 20 3 12 20 1 150 -55 to +150 Unit V V A A W W www.
kexin.
com.
cn 1 SMD Type N-Channel MOSFET 2SK1284-Z ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Cut-off Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Diode Forward Voltage Symbol Test Conditions VDSS ID=250μA, VGS=0V IDSS VDS=100V, VGS=0V IGSS VDS=0V, VGS=±10V VGS(off) VDS=10 V ID=1mA RDS(On) VGS=10V, ID=2 A VGS=4V, ID=2 A gFS VDS=10V, ID=2 A Ciss Coss VGS=0V, VDS=10V, f=1MHz Crss Qg Qgs VGS=10V, VDS=80V, ID=3A Qgd td(on) tr td(off) VGS=10V, VDS=50V, ID=2A, RL=25Ω,RG=10Ω tf trr IF= 3A, VGS=0, dI/dt= 50A/μs Qrr VSD IS=3A,VGS=0V MOSFET Min Typ Max Unit 100 V 10 uA ±10 uA 1 2.
5 V 320 mΩ 400 2.
4 S 500 160 pF 20 13 3 nC 2 40 55 500 ns 120 140 250 nC 0.
9 V 2 www.
kexin.
com.
cn SMD Type ■ Typical Characterisitics N-Channel MOSFET 2SK1284-Z MOSFET www.
kexin.
com.
c...


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