DatasheetsPDF.com

IRF540NS

Kexin
Part Number IRF540NS
Manufacturer Kexin
Description N-Channel MOSFET
Published Jul 3, 2019
Detailed Description SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ ...
Datasheet PDF File IRF540NS PDF File

IRF540NS
IRF540NS

Overview
SMD Type N-Channel MOSFET IRF540NS (KRF540NS) MOSFET ■ Features ● VDS (V) = 100V ● ID = 33 A (VGS = 10V) ● RDS(ON) ＜ 44mΩ (VGS = 10V) ● Fast Switching D TO-263 9.
65 (Min) 10.
67 (Max) 90 ~ 93 5.
33 (Min) Unit:mm 6.
22 (min) 1.
65 (max) 4.
06 (Min) 4.
83 (Max) 1.
14 (Min) 1.
40 (Max) 9.
65 (MAX) 8.
51 (MIN) 15.
88 (MAX) 14.
61 (MIN) G S 1.
27~1.
78 1.
14~1.
40 0.
51~0.
99 2.
54 0.
43~0.
63 1 Gate 2 Drain 3 Source ■ Absolute Maximum Ratings Ta = 25℃ Parameter Drain-Source Voltage Gate-Source Voltage Continuous Drain Current Pulsed Drain Current Avalanche Current Repetitive Avalanche Energy Peak Diode Recovery dv/dt Power Dissipation Linear Derating Factor Thermal Resistance.
Junction- to-Ambient Thermal Resistance.
Junction- to-Case Junction Temperature Storage Temperature Range Ta=25℃ Ta=70℃ Tc=25℃ Symbol VDS VGS ID IDM IAR EAR dv/dt PD RthJA RthJC TJ Tstg Rating 100 ±20 33 23 110 16 13 7 130 0.
87 40 1.
15 175 -55 to 175 Unit V A A mJ V/ns W W/℃ ℃/W ℃ www.
kexin.
com.
cn 1 SMD Type MOSFET N-Channel MOSFET IRF540NS (KRF540NS) ■ Electrical Characteristics Ta = 25℃ Parameter Drain-Source Breakdown Voltage Zero Gate Voltage Drain Current Gate-Body Leakage Current Gate Threshold Voltage Static Drain-Source On-Resistance Forward Transconductance Input Capacitance Output Capacitance Reverse Transfer Capacitance Total Gate Charge Gate Source Charge Gate Drain Charge Turn-On DelayTime Turn-On Rise Time Turn-Off DelayTime Turn-Off Fall Time Body Diode Reverse Recovery Time Body Diode Reverse Recovery Charge Internal Drain Inductance Internal Source Inductance Symbol VDSS IDSS IGSS VGS(th) RDS(On) gFS Ciss Coss Crss Qg Qgs Qgd td(on) tr td(off) tf trr Qrr LD LS Test Conditions ID=250μA, VGS=0V VDS=100V, VGS=0V VDS=80V, VGS=0V, TJ=150℃ VDS=0V, VGS=±20V VDS=VGS , ID=250μA VGS=10V, ID=16A (Note.
1) VDS=50V, ID=16A (Note.
1) VGS=0V, VDS=25V, f=1MHz VGS=10V, VDS=80V, ID=16A (Note.
1) VGS=10V, VDS=50V, ID=16A,RG=5.
1Ω (Note.
1) IF= 16A, dI/dt= 100A/μs,TJ = 25°C Between lead, 6mm ...


Similar Datasheet


@ 2014 :: Datasheetspdf.com :: Semiconductors datasheet search & download site. (Privacy Policy & Contact)