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IRF540

NXP
Part Number IRF540
Manufacturer NXP
Description N-channel TrenchMOS transistor
Published Apr 16, 2005
Detailed Description Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ tec...
Datasheet PDF File IRF540 PDF File

IRF540
IRF540

Overview
Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S FEATURES • ’Trench’ technology • Low on-state resistance • Fast switching • Low thermal resistance SYMBOL d QUICK REFERENCE DATA VDSS = 100 V ID = 23 A g RDS(ON) ≤ 77 mΩ s GENERAL DESCRIPTION N-channel enhancement mode field-effect power transistor in a plastic envelope using ’trench’ technology.
Applications:• d.
c.
to d.
c.
converters • switched mode power supplies • T.
V.
and computer monitor power supplies The IRF540 is supplied in the SOT78 (TO220AB) conventional leaded package.
The IRF540S is supplied in the SOT404 (D2PAK) surface mounting package.
PINNING PIN 1 2 3 tab gate drain1 source drain DESCRIPTION SOT78 (TO220AB) tab SOT404 (D2PAK) tab 2 1 23 1 3 LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER VDSS VDGR VGS ID IDM PD Tj, Tstg Drain-source voltage Drain-gate voltage Gate-source voltage Continuous drain current Pulsed drain current Total power dissipation Operating junction and storage temperature CONDITIONS Tj = 25 ˚C to 175˚C Tj = 25 ˚C to 175˚C; RGS = 20 kΩ Tmb = 25 ˚C; VGS = 10 V Tmb = 100 ˚C; VGS = 10 V Tmb = 25 ˚C Tmb = 25 ˚C MIN.
- 55 MAX.
100 100 ± 20 23 16 92 100 175 UNIT V V V A A A W ˚C 1 It is not possible to make connection to pin:2 of the SOT404 package August 1999 1 Rev 1.
100 Philips Semiconductors Product specification N-channel TrenchMOS™ transistor IRF540, IRF540S AVALANCHE ENERGY LIMITING VALUES Limiting values in accordance with the Absolute Maximum System (IEC 134) SYMBOL PARAMETER EAS Non-repetitive avalanche energy Peak non-repetitive avalanche current CONDITIONS Unclamped inductive load, IAS = 10 A; tp = 350 µs; Tj prior to avalanche = 25˚C; VDD ≤ 25 V; RGS = 50 Ω; VGS = 10 V; refer to fig:14 MIN.
MAX.
230 UNIT mJ IAS - 23 A THERMAL RESISTANCES SYMBOL PARAMETER Rth j-mb Rth j-a Thermal resistance junction to mounting base Thermal resistance junction to ambien...


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