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PSMN1R4-30YLD

nexperia
Part Number PSMN1R4-30YLD
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 5, 2019
Detailed Description PSMN1R4-30YLD N-channel 30 V, 1.4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product ...
Datasheet PDF File PSMN1R4-30YLD PDF File

PSMN1R4-30YLD
PSMN1R4-30YLD

Overview
PSMN1R4-30YLD N-channel 30 V, 1.
4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology 30 May 2014 Product data sheet 1.
General description Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package.
NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current.
NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.
2.
Features and benefits • Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies • Superfast switching with soft-recovery; s-factor > 1 • Low spiking and ringing for low EMI designs • Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C • Optimised for 4.
5 V gate drive • Low parasitic inductance and resistance • High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C • Wave solderable; exposed leads for optimal visual solder inspection 3.
Applications • On-board DC-to-DC solutions for server and telecommunications • Secondary-side synchronous rectification in telecommunication applications • Voltage regulator modules (VRM) • Point-of-Load (POL) modules • Power delivery for V-core, ASIC, DDR, GPU, VGA and system components • Brushed and brushless motor control • Power OR-ing 4.
Quick reference data Table 1.
Symbol VDS ID Ptot Quick reference data Parameter Conditions drain-source voltage 25 °C ≤ Tj ≤ 175 °C drain current Tmb = 25 °C; VGS = 10 V; Fig.
2 total power dissipation Tmb = 25 °C; Fig.
1 Min Typ Max Unit - - 30 V [1] - - 100 A - - 166 W Nexperia PSMN1R4-30YLD N-channel 30 V, 1.
4 mΩ logic level MOSFET in LFPAK56 using NextPowerS3 Technology Symbol Parameter Tj junction temperature Static characteristics RDSon drain-source on-state r...


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