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PMXB350UPE

nexperia
Part Number PMXB350UPE
Manufacturer nexperia
Description P-Channel MOSFET
Published Jul 5, 2019
Detailed Description PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1. General description P-channel enhanceme...
Datasheet PDF File PMXB350UPE PDF File

PMXB350UPE
PMXB350UPE

Overview
PMXB350UPE 20 V, P-channel Trench MOSFET 24 January 2014 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1010D-3 (SOT1215) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Leadless ultra small and ultra thin SMD plastic package: 1.
1 × 1.
0 × 0.
37 mm • Exposed drain pad for excellent thermal conduction • ElectroStatic Discharge (ESD) protection 1 kV HBM • Drain-source on-state resistance RDSon = 350 mΩ 3.
Applications • High-side load switch and charging switch for portable devices • Power management in battery driven portables • ...


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