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NE68633

CEL
Part Number NE68633
Manufacturer CEL
Description SILICON TRANSISTOR
Published Jul 7, 2019
Detailed Description SILICON TRANSISTOR NE686 SERIES DISCONTINUED SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN...
Datasheet PDF File NE68633 PDF File

NE68633
NE68633

Overview
SILICON TRANSISTOR NE686 SERIES DISCONTINUED SURFACE MOUNT NPN SILICON HIGH FREQUENCY TRANSISTOR FEATURES • HIGH GAIN BANDWIDTH PRODUCT: fT of 15 GHz • LOW VOLTAGE/LOW CURRENT OPERATION • HIGH INSERTION POWER GAIN: |S21E|2 = 12 dB @ 2 V, 7 mA, 2 GHz |S21E|2 = 11 dB @ 1 V, 5 mA, 2 GHz • LOW NOISE: 1.
5 dB AT 2.
0 GHz • AVAILABLE IN SIX LOW COST PLASTIC SURFACE MOUNT PACKAGE STYLES DESCRIPTION The NE686 series of NPN epitaxial silicon transistors are designed for low voltage/low current, amplifier and oscillator applications.
NE686's high fT make it an excellent choice for portable wireless applications up to 5 GHz.
The NE686 die is available in six different low cost plastic surface mount package styles.
18 (SOT 343 STYLE) 19 (3 PIN ULTRA SUPER MINI MOLD) 30 (SOT 323 STYLE) 33 (SOT 23 STYLE) ELECTRICAL CHARACTERISTICS (TA = 25°C) 39 (SOT 143 STYLE) 39R (SOT 143R STYLE) PART NUMBER1 EIAJ2 REGISTERED NUMBER PACKAGE OUTLINE NE68618 2SC5180 18 NE68619 2SC5181 19 NE68630 2SC5179 30 NE68633 2SC5177 33 NE68639/39R 2SC5178/78R 39/39R SYMBOLS PARAMETERS AND CONDITIONS UNITS MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX MIN TYP MAX fT Gain Bandwidth Product at VCE = 2 V, IC = 7 mA, f = 2.
0 GHz GHz 12 15.
5 10 13 7.
5 9 10 13 10.
5 13.
5 fT Gain Bandwidth Product at VCE = 1 V, IC = 5 mA, f = 2.
0 GHz GHz 10 13 8.
5 12 7 8.
5 8.
5 12 8.
5 12 NFMIN Minimum Noise Figure at VCE = 2 V, IC = 3 mA, f = 2.
0 GHz dB 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 NFMIN |S21e|2 |S21e|2 hFE Minimum Noise Figure at VCE = 1 V, IC = 3 mA, f = 2.
0 GHz Insertion Power Gain at VCE = 2V, IC =7 mA, f = 2.
0 GHz Insertion Power Gain at VCE = 1V, IC =5 mA, f = 2.
0 GHz Forward Current Gain3 at VCE = 2 V, IC = 7 mA dB 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 1.
5 2.
0 dB 10 12 8 10.
5 7.
5 9 7.
5 9 9.
5 11.
5 dB 8.
5 11 79 7 8.
5 7 8.
5 7.
5 10.
5 70 140 70 140 70 140 70 140 70 140 ICBO Collector Cutoff Current at VCB = 5 V, IE = 0 mA nA 100 100 100 100 100 IEBO Emitter Cutoff Cu...


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