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S-MMBT2907ALT1

Part Number	S-MMBT2907ALT1
Manufacturer	MEI
Description	General Purpose Transistor
Published	Jul 8, 2019
Detailed Description	 General Purpose Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements. •...
Datasheet	S-MMBT2907ALT1 PDF File

Overview

 General Purpose Transistor PNP Silicon • We declare that the material of product compliance with RoHS requirements.
• S- Prefix for Automotive and Other Applications Requiring Unique Site and Control Change Requirements; AEC-Q101 Qualified and PPAP Capable.
MMBT2907LT1 MMBT2907ALT1 S-MMBT2907LT1 S-MMBT2907ALT1 MAXIMUM RATINGS Rating Symbol Collector–Emitter Voltage V CEO Collector–Base Voltage V CBO Emitter–Base Voltage V EBO Collector Current — Continuous I C Value 2907 2907A –40 –60 –60 –5.
0 –600 Unit Vdc Vdc Vdc mAdc 3 1 2 SOT–23 THERMAL CHARACTERISTICS Characteristic Total Device Dissipation FR– 5 Board, (1) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Total Device Dissipation Alumina Substrate, (2) TA = 25°C Derate above 25°C Thermal Resistance, Junction to Ambient Junction and Storage Temperature Symbol PD RθJA PD RθJA TJ , Tstg Max Unit 225 mW 1.
8 mW/°C 556 °C/W 300 mW 2.
4 417 –55 to +150 mW/°C °C/W °C DEVICE MARKING MMBT2907LT1 = ...

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S-MMBT2907ALT1 General Purpose Transistor - MEI

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