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V20PW45C

Vishay
Part Number V20PW45C
Manufacturer Vishay
Description High Current Density Surface-Mount TMBS Rectifier
Published Jul 10, 2019
Detailed Description www.vishay.com V20PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Scho...
Datasheet PDF File V20PW45C PDF File

V20PW45C
V20PW45C

Overview
www.
vishay.
com V20PW45C Vishay General Semiconductor High Current Density Surface-Mount TMBS® (Trench MOS Barrier Schottky) Rectifier Ultra Low VF = 0.
36 V at IF = 5 A eSMP® Series 1 2 SlimDPAK (TO-252AE) PIN 1 PIN 2 K HEATSINK K FEATURES • Very low profile - typical height of 1.
3 mm • Trench MOS Schottky technology • Ideal for automated placement • Low forward voltage drop, low power losses • High efficiency operation • Meets MSL level 1, per J-STD-020, LF maximum peak of 260 °C • AEC-Q101 qualified available - Automotive ordering code: base P/NHM3 • Material categorization: for definitions of compliance please see www.
vishay.
com/doc?99912 DESIGN SUPPORT TOOLS click logo to get started Models Available TYPICAL APPLICATIONS For use in low voltage high frequency DC/DC converters, freewheeling diodes, and polarity protection applications.
PRIMARY CHARACTERISTICS IF(AV) 20 A VRRM 45 V IFSM 150 A VF at IF = 10 A (TA = 125 °C) 0.
44 V TJ max.
150 °C Package SlimDPAK (TO-252AE) Circuit configuration Common cathode MECHANICAL DATA Case: SlimDPAK (TO-252AE) Molding compound meets UL 94 V-0 flammability rating Base P/N-M3 - halogen-free, RoHS-compliant Base P/NHM3 - halogen-free, RoHS-compliant, and AEC-Q101 qualified Terminals: matte tin plated leads, solderable per J-STD-002 and JESD 22-B102  M3 and HM3 suffix meets JESD 201 class 2 whisker test MAXIMUM RATINGS (TA = 25 °C unless otherwise noted) PARAMETER SYMBOL V20PW45C Device marking code V20PW45C Maximum repetitive peak reverse voltage Maximum average forward rectified current (fig.
1) per device per diode VRRM IF(AV) (1) 45 20 10 Peak forward surge current 8.
3 ms single half sine-wave superimposed on rated load per diode IFSM 150 Operating junction temperature range Storage temperature range TJ (2) TSTG -40 to +150 -55 to +150 Notes (1) With infinite heatsink (2) The heat generated must be less than the thermal conductivity from junction to ambient: dPD/dTJ < 1/RJA UN...


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