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PDTD123EK

NXP
Part Number PDTD123EK
Manufacturer NXP
Description 50V resistor-equipped transistors
Published Jul 21, 2019
Detailed Description PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.2 kΩ, R2 = 2.2 kΩ Rev. 02 — 16 November 2009 P...
Datasheet PDF File PDTD123EK PDF File

PDTD123EK
PDTD123EK

Overview
PDTD123E series NPN 500 mA, 50 V resistor-equipped transistors; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ Rev.
02 — 16 November 2009 Product data sheet 1.
Product profile 1.
1 General description 500 mA NPN Resistor-Equipped Transistors (RET) family.
Table 1.
Product overview Type number Package NXP PDTD123EK SOT346 PDTD123ES[1] SOT54 PDTD123ET SOT23 JEITA SC-59A SC-43A - JEDEC TO-236 TO-92 TO-236AB [1] Also available in SOT54A and SOT54 variant packages (see Section 2).
PNP complement PDTB123EK PDTB123ES PDTB123ET 1.
2 Features „ Built-in bias resistors „ Simplifies circuit design „ 500 mA output current capability „ Reduces component count „ Reduces pick and place costs „ ±10 % resistor ratio tolerance 1.
3 Applications „ Digital application in automotive and industrial segments „ Controlling IC inputs „ Cost saving alternative for BC817 series in digital applications „ Switching loads 1.
4 Quick reference data Table 2.
Symbol VCEO IO R1 R2/R1 Quick reference data Parameter collector-emitter voltage output current (DC) bias resistor 1 (input) bias resistor ratio Conditions open base Min 1.
54 0.
9 Typ 2.
2 1.
0 Max Unit 50 V 500 mA 2.
86 kΩ 1.
1 NXP Semiconductors PDTD123E series NPN 500 mA resistor-equipped transistors; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ 2.
Pinning information Table 3.
Pin SOT54 1 2 3 Pinning Description input (base) output (collector) GND (emitter) SOT54A 1 2 3 input (base) output (collector) GND (emitter) SOT54 variant 1 input (base) 2 output (collector) 3 GND (emitter) SOT23, SOT346 1 input (base) 2 GND (emitter) 3 output (collector) Simplified outline Symbol 1 2 3 001aab347 R1 1 2 R2 3 006aaa145 1 2 3 001aab348 R1 1 2 R2 3 006aaa145 1 2 3 001aab447 R1 1 2 R2 3 006aaa145 3 12 006aaa144 R1 1 3 R2 2 sym007 PDTD123E_SER_2 Product data sheet Rev.
02 — 16 November 2009 © NXP B.
V.
2009.
All rights reserved.
2 of 10 NXP Semiconductors PDTD123E series NPN 500 mA resistor-equipped transistors; R1 = 2.
2 kΩ, R2 = 2.
2 kΩ 3.
Ord...


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