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PBHV8560Z

nexperia
Part Number PBHV8560Z
Manufacturer nexperia
Description NPN transistor
Published Jul 21, 2019
Detailed Description PBHV8560Z 600 V, 0.5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1. General des...
Datasheet PDF File PBHV8560Z PDF File

PBHV8560Z
PBHV8560Z

Overview
PBHV8560Z 600 V, 0.
5 A NPN high-voltage low VCEsat (BISS) transistor 13 March 2015 Product data sheet 1.
General description NPN high-voltage low VCEsat Breakthrough In Small Signal (BISS) transistor in a SOT223 (SC-73) medium power Surface-Mounted Device (SMD) plastic package.
PNP complement: PBHV9560Z 2.
Features and benefits • Low collector-emitter saturation voltage VCEsat • High collector current capability • High collector current gain hFE at high IC • AEC-Q101 qualified 3.
Applications • Electronic ballast for fluorescent lighting • LED driver for LED chain module • LCD backlighting • High Intensity Discharge (HID) front lighting • Automotive motor management • Hook switch for wired telecom • Switch Mode Power Supply (SMPS) 4.
Quick reference data Table 1.
Symbol VCEO IC hFE Quick reference data Parameter collector-emitter voltage collector current DC current gain Conditions open base VCE = 10 V; IC = 50 mA; Tamb = 25 °C Min Typ Max Unit - - 600 V - - 0.
5 A 70 135 - ...


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