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PBRP113ET

nexperia
Part Number PBRP113ET
Manufacturer nexperia
Description PNP RET
Published Jul 21, 2019
Detailed Description PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev. 01 — 17 December 2007 Product data sheet 1. Product p...
Datasheet PDF File PBRP113ET PDF File

PBRP113ET
PBRP113ET

Overview
PBRP113ET PNP 800 mA, 40 V BISS RET; R1 = 1 kΩ, R2 = 1 kΩ Rev.
01 — 17 December 2007 Product data sheet 1.
Product profile 1.
1 General description 800 mA PNP low VCEsat Breakthrough In Small Signal (BISS) Resistor-Equipped Transistor (RET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package.
NPN complement: PBRN113ET.
1.
2 Features I 800 mA repetitive peak output current I High current gain hFE I Built-in bias resistors I Simplifies circuit design I Low collector-emitter saturation voltage VCEsat I Reduces component count I Reduces pick and place costs I ±10 % resistor ratio tolerance 1.
3 Applications I Digital application in automotive and industrial segments I Medium current peripheral driver I Switching loads 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VCEO collector-emitter voltage open base - - −40 V IO output current [1][2] - - −600 mA IORM repetitive peak output current tp ≤ 1 ms; [3...


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