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PMEG2015EV

NXP
Part Number PMEG2015EV
Manufacturer NXP
Description MEGA Schottky barrier diode
Published Jul 26, 2019
Detailed Description DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes...
Datasheet PDF File PMEG2015EV PDF File

PMEG2015EV
PMEG2015EV

Overview
DISCRETE SEMICONDUCTORS DATA SHEET M3D744 PMEG2015EV Low VF MEGA Schottky barrier diode Product data sheet Supersedes data of 2003 May 21 2003 Jun 03 NXP Semiconductors Low VF MEGA Schottky barrier diode Product data sheet PMEG2015EV FEATURES • Forward current: 1.
5 A • Reverse voltage: 20 V • Very low forward voltage • Ultra small plastic SMD package • Flat leads: excellent coplanarity and improved thermal behaviour.
APPLICATIONS • Low voltage rectification • High efficiency DC-DC conversion • Switch mode power supply • Inverse polarity protection • Low power consumption applications.
PINNING PIN 1 2 3 4 5 6 handbook, halfpag6e 5 4 DESCRIPTION Planar Maximum Efficiency General Application (MEGA) Schottky barrier diode with an integrated guard ring for stress protection, encapsulated in a SOT666 ultra small SMD plastic package.
123 Marking code: F5.
DESCRIPTION cathode cathode anode anode cathode cathode 1, 2 5, 6 3, 4 MHC310 Fig.
1 Simplified outline (SOT666 and symbol).
LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134).
SYMBOL PARAMETER VR IF IFSM IFRM Tstg Tj Tamb continuous reverse voltage continuous forward current non-repetitive peak forward current repetitive peak forward current storage temperature junction temperature operating ambient temperature CONDITIONS Ts < 55 °C tp = 8 ms square wave; note 1 tp = 1 ms; δ = ≤ 0.
25 MIN.
− − − − −65 − −65 Note 1.
Only valid if pins 3 and 4 are connected in parallel.
MAX.
20 1.
5 10 4.
5 +150 150 +125 UNIT V A A A °C °C °C 2003 Jun 03 2 NXP Semiconductors Low VF MEGA Schottky barrier diode Product data sheet PMEG2015EV ELECTRICAL CHARACTERISTICS Tamb = 25 °C unless otherwise specified.
SYMBOL PARAMETER CONDITIONS TYP.
VF continuous forward voltage IR continuous reverse current Cd diode capacitance see Fig.
2; note 1 IF = 10 mA IF = 100 mA IF = 1000 mA IF = 1500 mA see Fig.
3; note 2 240 300 480 530 VR = 5 V 5 VR = 8 V 7 VR = 15 V 10 VR = 5 V; f = 1 MH...


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