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SSM6K514NU

Toshiba
Part Number SSM6K514NU
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jul 27, 2019
Detailed Description MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K514NU 1. Applications • Power Management Switches 2. Features (1) 4.5 V dr...
Datasheet PDF File SSM6K514NU PDF File

SSM6K514NU
SSM6K514NU

Overview
MOSFETs Silicon N-channel MOS (U-MOS-H) SSM6K514NU 1.
Applications • Power Management Switches 2.
Features (1) 4.
5 V drive (2) Low drain-source on-resistance : RDS(ON) = 11.
2 mΩ (typ.
) (@VGS = 4.
5 V) RDS(ON) = 8.
9 mΩ (typ.
) (@VGS = 10 V) 3.
Packaging and Pin Assignment UDFN6B SSM6K514NU 1, 2, 5, 6: Drain 3: Gate 4: Source ©2016 Toshiba Corporation 1 Start of commercial production 2016-05 2017-06-16 Rev.
3.
0 SSM6K514NU 4.
Absolute Maximum Ratings (Note) (Unless otherwise specified, Ta = 25) Characteristics Symbol Rating Unit Drain-source voltage VDSS 40 V Gate-source voltage VGSS ±20 Drain current (DC) Drain current (pulsed) (Note 1) ID IDP 12 A 50 Power dissipation (Not...


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