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PSMN2R8-40YSD

Part Number	PSMN2R8-40YSD
Manufacturer	nexperia
Description	N-channel MOSFET
Published	Jul 28, 2019
Detailed Description	PSMN2R8-40YSD 4 June 2019 Preliminary data sheet 1. Quick reference data Table 1. Quick reference data Symbol Param...
Datasheet	PSMN2R8-40YSD PDF File

Overview

PSMN2R8-40YSD 4 June 2019 Preliminary data sheet 1.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage ID drain current Ptot total power dissipation Tj junction temperature Static characteristics RDSon drain-source on-state resistance Dynamic characteristics QGD QG(tot) gate-drain charge total gate charge Conditions 25 °C ≤ Tj ≤ 175 °C VGS = 10 V; Tmb = 25 °C; Fig.
2 Tmb = 25 °C; Fig.
1 VGS = 10 V; ID = 25 A; Tj = 25 °C; Fig.
10 ID = 25 A; VDS = 20 V; VGS = 10 V; Fig.
12; Fig.
13 Min Typ Max Unit - - 40 V [1] - - 120 A - - 147 W -55 - 175 °C - 2.
4 2.
7 mΩ - 7 14 nC - 44 62 nC [1] 120A Continuous current has been successfully demonstrated during application tests.
Practically the current will be limited by PCB, thermal design and operating temperature.
2.
Pinning information Table 2.
Pinning information Pin Symbol Description Simplified outline 1 S source mb 2 S source 3 S source 4 G gate mb D mounting base; connected to drain 1234 LFPAK56; PowerSO8 (SOT669) Graphic symbol D G mbb076 S 3.
Ordering information Table 3.
Ordering information Type number Package Name PSMN2R8-40YSD LFPAK56; Power-SO8 Description plastic, single-ended surface-mounted package; 4 terminals Version SOT669 Nexperia PSMN2R8-40YSD 4.
Limiting values Table 4.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS VDSM drain-source voltage peak drain-source voltage 25 °C ≤ Tj ≤ 175 °C tp ≤ 20 ns; f ≤ 500 kHz; EDS(AL) ≤ 200 nJ; pulsed VDGR VGS Ptot ID IDM Tstg Tj Tsld(M) drain-gate voltage gate-source voltage total power dissipation drain current peak drain current storage temperature junction temperature peak soldering temperature 25 °C ≤ Tj ≤ 175 °C; RGS = 20 kΩ Tmb = 25 °C; Fig.
1 VGS = 10 V; Tmb = 25 °C; Fig.
2 VGS = 10 V; Tmb = 100 °C; Fig.
2 pulsed; tp ≤ 10 µs; Tmb = 25 °C; Fig.
3 [1] Source-drain diode IS source current Tmb = 25 °C...

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