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PMCM4401VPE

nexperia
Part Number PMCM4401VPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1. General description P-channel enhancement...
Datasheet PDF File PMCM4401VPE PDF File

PMCM4401VPE
PMCM4401VPE

Overview
PMCM4401VPE 12 V, P-channel Trench MOSFET 29 July 2015 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a 4 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Ultra small package: 0.
78 × 0.
78 × 0.
35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Battery switch • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-s...


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