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PMCM6501VPE

nexperia
Part Number PMCM6501VPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1. General description P-channel enhanceme...
Datasheet PDF File PMCM6501VPE PDF File

PMCM6501VPE
PMCM6501VPE

Overview
PMCM6501VPE 12 V, P-channel Trench MOSFET 10 August 2015 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a 6 bumps Wafer Level Chip-Size Package (WLCSP) using Trench MOSFET technology.
2.
Features and benefits • Low threshold voltage • Ultra small package: 0.
98 × 1.
48 × 0.
35 mm • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Battery switch • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -12 V VGS gate-source voltage -8...


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