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PMN48XP

nexperia
Part Number PMN48XP
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMN48XP 20 V, 4.1 A P-channel Trench MOSFET Rev. 1 — 21 April 2011 Product data sheet 1. Product profile 1.1 General ...
Datasheet PDF File PMN48XP PDF File

PMN48XP
PMN48XP

Overview
PMN48XP 20 V, 4.
1 A P-channel Trench MOSFET Rev.
1 — 21 April 2011 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Low RDSon  Very fast switching  Trench MOSFET technology 1.
3 Applications  Relay driver  High-speed line driver  High-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics Tj = 25 °C VGS = -4.
5 V; Tamb = 25 °C -- -12 - [1] - - -20 V 12 V -4.
1 A RDSon drain-source on-state VGS = -4.
5 V; ID = -2.
4 A; Tj = 25 °C resistance - 48 55 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated, mounting pad for drain 6 cm2.
2.
Pinning information Table 2.
Pin 1 2 3 4 5 6 Pinning information Symbol Description D drain D drain G gate S source D drain D drain Simplified outline 654 123 SOT457 (TSOP6) Graphic symbol D G S 017aaa094 Nexperia PMN48XP 20 V, 4.
1 A P-channel Trench MOSFET 3.
Ordering information Table 3.
Ordering information Type number Package Name PMN48XP TSOP6 4.
Marking Description plastic surface-mounted package (TSOP6); 6 leads Version SOT457 Table 4.
Marking codes Type number PMN48XP 5.
Limiting values Marking code ZV Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = -4.
5 V; Tamb = 25 °C VGS = -4.
5 V; Tamb = 100 °C IDM peak drain current Tamb = 25 °C; single pulse; tp ≤ 10 µs Ptot total power dissipation Tamb = 25 °C Tj junction temperature Tamb ambient temperature Tstg storage temperature Source-drain diode IS source current Ts...


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