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PMN50EPE

nexperia
Part Number PMN50EPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMN50EPE 30 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1. General description P-channel enhancement m...
Datasheet PDF File PMN50EPE PDF File

PMN50EPE
PMN50EPE


Overview
PMN50EPE 30 V, P-channel Trench MOSFET 16 April 2018 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT457 (SC-74) SurfaceMounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Logic-level compatible • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM 3.
Applications • Relay driver • High-speed line driver • High-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source...



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