DatasheetsPDF.com

PMPB100ENE

nexperia
Part Number PMPB100ENE
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1. General description N-channel enhancement mode F...
Datasheet PDF File PMPB100ENE PDF File

PMPB100ENE
PMPB100ENE

Overview
PMPB100ENE 30 V, N-channel MOSFET 26 April 2018 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a leadless medium power DFN2020MD-6 (SOT1220) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Extended temperature range Tj = 175 °C • Small and leadless ultra thin SMD plastic package: 2 x 2 x 0.
65 mm • Tin-plated 100 % solderable side pads for optical solder inspection • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Trench MOSFET technology 3.
Applications • Relay driver • High-speed line driver • Low-side load switch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C; t ≤ 5 s VGS = 10 V; ID = 3.
9 A; Tj = 25 °C Min Typ Max - - 30 -20 - 20 [1]...


Similar Datasheet


Since 2006. D4U Semicon,
Electronic Components Datasheet Search Site. (Privacy Policy & Contact)