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PMT280ENEA

Part Number	PMT280ENEA
Manufacturer	nexperia
Description	N-channel MOSFET
Published	Jul 28, 2019
Detailed Description	PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1. General description N-channel enhancement ...
Datasheet	PMT280ENEA PDF File

Overview

PMT280ENEA 100 V N-channel Trench MOSFET 14 July 2016 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a medium power SOT223 (SC-73) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3.
Applications • Relay driver • LED backlight driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 1.
5 A; Tj = 25 °C Min Typ Max Unit - - 100 V -20 - 20 V [1] - - 1.
5 A - 285 385 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad for drain 6 cm2.
Nexperia PMT280ENEA 100 V N-channel Trench MOSFET 5.
Pinning information Table 2.
Pinning information Pin Symbol Description 1 G gate 2 D drain 3 S source 4 D drain Simplified outline 4 123 SC-73 (SOT223) Graphic symbol D G S 017aaa255 6.
Ordering information Table 3.
Ordering information Type number Package Name PMT280ENEA SC-73 Description plastic surface-mounted package with increased heatsink; 4 leads Version SOT223 7.
Marking Table 4.
Marking codes Type number PMT280ENEA Marking code 28ENEA PMT280ENEA Product data sheet All information provided in this document is subject to legal disclaimers.
14 July 2016 © Nexperia B.
V.
2017.
All rights reserved 2 / 16 Nexperia PMT280ENEA 100 V N-channel Trench MOSFET 8.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID drain current VGS = 1...

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