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PMV50UPE

nexperia
Part Number PMV50UPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1. Product profile 1.1 General descript...
Datasheet PDF File PMV50UPE PDF File

PMV50UPE
PMV50UPE


Overview
PMV50UPE 20 V, single P-channel Trench MOSFET 20 July 2012 Product data sheet 1.
Product profile 1.
1 General description P-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits • 3 kV ESD protected • Trench MOSFET technology • Low threshold voltage 1.
3 Applications • Relay driver • High-side loadswitch • Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - -20 V VGS gate-source voltage -8 - 8V ID drain current VGS = -4.
5 V; Tamb = 25 °C; t...



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