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PMZB1200UPE

nexperia
Part Number PMZB1200UPE
Manufacturer nexperia
Description P-channel MOSFET
Published Jul 28, 2019
Detailed Description PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1. General description P-channel enhancemen...
Datasheet PDF File PMZB1200UPE PDF File

PMZB1200UPE
PMZB1200UPE

Overview
PMZB1200UPE 30 V, P-channel Trench MOSFET 25 March 2015 Product data sheet 1.
General description P-channel enhancement mode Field-Effect Transistor (FET) in a leadless ultra small DFN1006B-3 (SOT883B) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Trench MOSFET technology • Low threshold voltage • Very fast switching • ElectroStatic Discharge (ESD) protection > 2 kV HBM • Ultra thin package profile of 0.
37 mm height 3.
Applications • Relay driver • High-speed line driver • High-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source ...


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