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BSS138BKW

nexperia
Part Number BSS138BKW
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev. 1 — 12 August 2011 Product data sheet 1. Product profile 1.1 Gene...
Datasheet PDF File BSS138BKW PDF File

BSS138BKW
BSS138BKW

Overview
BSS138BKW 60 V, 320 mA N-channel Trench MOSFET Rev.
1 — 12 August 2011 Product data sheet 1.
Product profile 1.
1 General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT323 (SC-70) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
1.
2 Features and benefits  Logic-level compatible  Very fast switching  Trench MOSFET technology  ESD protection up to 1.
5 kV  AEC-Q101 qualified 1.
3 Applications  Relay driver  High-speed line driver  Low-side loadswitch  Switching circuits 1.
4 Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions Min Typ Max Unit VDS drain-source voltage Tj = 25 °C - - 60 V VGS gate-source voltage -20 - 20 V ID drain current VGS = 10 V; Tamb = 25 °C [1] - - 320 mA Static characteristics RDSon drain-source on-state VGS = 10 V; ID = 320 mA; - 1 1.
6 Ω resistance Tj = 25 °C [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for drain 1 cm2.
Nexperia BSS138BKW 60 V, 320 mA N-channel Trench MOSFET 2.
Pinning information Table 2.
Pin 1 2 3 Pinning information Symbol Description G gate S source D drain Simplified outline 3 12 SOT323 (SC-70) Graphic symbol D G S 017aaa255 3.
Ordering information Table 3.
Ordering information Type number Package Name BSS138BKW SC-70 4.
Marking Description plastic surface-mounted package; 3 leads Version SOT323 Table 4.
Marking codes Type number BSS138BKW [1] % = placeholder for manufacturing site code.
Marking code[1] AD% BSS138BKW Product data sheet All information provided in this document is subject to legal disclaimers.
Rev.
1 — 12 August 2011 © Nexperia B.
V.
2017.
All rights reserved 2 of 16 Nexperia BSS138BKW 60 V, 320 mA N-channel Trench MOSFET 5.
Limiting values Table 5.
Limiting values In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter Conditions VDS drain-source voltage Tj = 25 °C VGS gate-source voltage ID dr...


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