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BUK962R8-60E

nexperia
Part Number BUK962R8-60E
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BUK962R8-60E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1. General description Logic level N-...
Datasheet PDF File BUK962R8-60E PDF File

BUK962R8-60E
BUK962R8-60E

Overview
BUK962R8-60E N-channel TrenchMOS logic level FET 28 July 2016 Product data sheet 1.
General description Logic level N-channel MOSFET in a SOT404 package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2.
Features and benefits • AEC Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.
5V at 175 °C 3.
Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Start-Stop micro-hybrid applications • Transmission control • Ultra high performance power switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage Tj ≥ 25 °C; Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig.
2 [1] Ptot total power dissipation Tmb = 25 °C; Fig.
1 Static characteristics RDSon drain-source on-stat...


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