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BUK9Y4R8-60E

nexperia
Part Number BUK9Y4R8-60E
Manufacturer nexperia
Description N-channel MOSFET
Published Jul 28, 2019
Detailed Description BUK9Y4R8-60E N-channel 60 V, 4.8 mΩ logic level MOSFET in LFPAK56 7 January 2016 Product data sheet 1. General descr...
Datasheet PDF File BUK9Y4R8-60E PDF File

BUK9Y4R8-60E
BUK9Y4R8-60E

Overview
BUK9Y4R8-60E N-channel 60 V, 4.
8 mΩ logic level MOSFET in LFPAK56 7 January 2016 Product data sheet 1.
General description Logic level N-channel MOSFET in an LFPAK56 (Power SO8) package using TrenchMOS technology.
This product has been designed and qualified to AEC Q101 standard for use in high performance automotive applications.
2.
Features and benefits • Q101 compliant • Repetitive avalanche rated • Suitable for thermally demanding environments due to 175 °C rating • True logic level gate with VGS(th) rating of greater than 0.
5 V at 175 °C 3.
Applications • 12 V Automotive systems • Motors, lamps and solenoid control • Transmission control • Ultra high performance power switching 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter Conditions VDS drain-source voltage 25 °C ≤ Tj ≤ 175 °C ID drain current VGS = 5 V; Tmb = 25 °C; Fig.
2 [1] Ptot total power dissipation Tmb = 25 °C; Fig.
1 Static characteristics RDSon drain-source on-state VGS = 5 V...


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