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PMV100ENEA

Part Number	PMV100ENEA
Manufacturer	nexperia
Description	N-channel MOSFET
Published	Jul 28, 2019
Detailed Description	PMV100ENEA 30 V, N-channel Trench MOSFET 17 March 2016 Product data sheet 1. General description N-channel enhancement...
Datasheet	PMV100ENEA PDF File

Overview

PMV100ENEA 30 V, N-channel Trench MOSFET 17 March 2016 Product data sheet 1.
General description N-channel enhancement mode Field-Effect Transistor (FET) in a small SOT23 (TO-236AB) Surface-Mounted Device (SMD) plastic package using Trench MOSFET technology.
2.
Features and benefits • Logic level compatible • Very fast switching • Trench MOSFET technology • ElectroStatic Discharge (ESD) protection > 2 kV HBM • AEC-Q101 qualified 3.
Applications • Relay driver • High-speed line driver • Low-side loadswitch • Switching circuits 4.
Quick reference data Table 1.
Quick reference data Symbol Parameter VDS drain-source voltage VGS gate-source voltage ID drain current Static characteristics RDSon drain-source on-state resistance Conditions Tj = 25 °C VGS = 10 V; Tamb = 25 °C VGS = 10 V; ID = 3 A; Tj = 25 °C Min Typ Max Unit - - 30 V -20 - 20 V [1] - - 3 A - 54 72 mΩ [1] Device mounted on an FR4 Printed-Circuit Board (PCB), single-sided copper, tin-plated and mounting pad ...

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PMV100ENEA N-channel MOSFET - nexperia

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