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TK17A80W

Toshiba
Part Number TK17A80W
Manufacturer Toshiba
Description Silicon N-Channel MOSFET
Published Jul 30, 2019
Detailed Description MOSFETs Silicon N-Channel MOS (DTMOS) TK17A80W 1. Applications • Switching Voltage Regulators 2. Features (1) Low drain...
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TK17A80W
TK17A80W


Overview
MOSFETs Silicon N-Channel MOS (DTMOS) TK17A80W 1.
Applications • Switching Voltage Regulators 2.
Features (1) Low drain-source on-resistance: RDS(ON) = 0.
25 Ω (typ.
) by using Super Junction Structure : DTMOS (2) Easy to control Gate switching (3) Enhancement mode: Vth = 3.
0 to 4.
0 V (VDS = 10 V, ID = 0.
85mA) 3.
Packaging and Internal Circuit TK17A80W 1: Gate 2: Drain 3: Source TO-220SIS 4.
Absolute Maximum Ratings (Note) (Ta = 25  unless otherwise specified) Characteristics Symbol Rating Unit Drain-source voltage Gate-source voltage Drain current (DC) Drain current (pulsed) Power dissipation Single-pulse avalanche energy Single-pulse avalanche current Reverse drain current (DC) Reverse drain current (pulsed) Channel temperature Storage temperature Isolation voltage (RMS) Mounting torque (Tc = 25) (t = 1.
0 s) (Note 1) (Note 1) (Note 2) (Note 1) (Note 1) VDSS VGSS ID IDP PD EAS IAS IDR IDRP Tch Tstg VISO(RMS) TOR 800 ±20 17 68 45 475 3.
4 17 68 150 -55 to 150 2000 0.
6 V A W mJ A  V Nm Note: Using continuously under heavy loads (e.
g.
the application of high temperature/current/voltage and the significant change in temperature, etc.
) may cause this product to decrease in the reliability significantly even if the operating conditions (i.
e.
operating temperature/current/voltage, etc.
) are within the absolute maximum ratings.
Please design the appropriate reliability upon reviewing the Toshiba Semiconductor Reliability Handbook ("Handling Precautions"/"Derating Concept and Methods") and individual reliability data (i.
e.
reliability test report and estimated failure rate, etc).
Start of commercial production 2015-07 ©2016 Toshiba Corporation 1 2016-02-05 Rev.
5.
0 5.
Thermal Characteristics Characteristics Channel-to-case thermal resistance Channel-to-ambient thermal resistance Note 1: Ensure that the channel temperature does not exceed 150 .
Note 2: VDD = 90 V, Tch = 25  (initial), L = 74.
5 mH, RG = 25 Ω, IAS = 3.
4 A TK17A80W Symbol Rth(ch-c) Rth...


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