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NTMFS5H600NL

ON Semiconductor
Part Number NTMFS5H600NL
Manufacturer ON Semiconductor
Description N-Channel Power MOSFET
Published Jul 31, 2019
Detailed Description NTMFS5H600NL MOSFET – Power, Single, N-Channel 60 V, 1.3 mW, 250 A Features • Small Footprint (5x6 mm) for Compact Des...
Datasheet PDF File NTMFS5H600NL PDF File

NTMFS5H600NL
NTMFS5H600NL

Overview
NTMFS5H600NL MOSFET – Power, Single, N-Channel 60 V, 1.
3 mW, 250 A Features • Small Footprint (5x6 mm) for Compact Design • Low RDS(on) to Minimize Conduction Losses • Low QG and Capacitance to Minimize Driver Losses • These Devices are Pb−Free and are RoHS Compliant MAXIMUM RATINGS (TJ = 25°C unless otherwise noted) Parameter Symbol Value Unit Drain−to−Source Voltage Gate−to−Source Voltage Continuous Drain C(Nuortreesnt1R, 3qJ)C Power Dissipation RqJC (Note 1) Steady State TC = 25°C TC = 100°C TC = 25°C TC = 100°C Continuous Drain C(Nuortreesnt1R, 2qJ,A3) Power Dissipation RqJA (Notes 1, 2) Steady State TA = 25°C TA = 100°C TA = 25°C TA = 100°C Pulsed Drain Current TA = 25°C, tp = 10 ms Operating Junction and Storage Temperature VDSS VGS ID PD ID PD IDM TJ, Tstg 60 ±20 250 160 160 63 35 22 3.
3 1.
3 900 −55 to + 150 V V A W A W A °C Source Current (Body Diode) IS 170 A Single Pulse Drain−to−Source Avalanche Energy (IL(pk) = 26 A) EAS 338 mJ Lead Temperature for Soldering Purposes (1/8″ from case for 10 s) TL 260 °C Stresses exceeding those listed in the Maximum Ratings table may damage the device.
If any of these limits are exceeded, device functionality should not be assumed, damage may occur and reliability may be affected.
THERMAL RESISTANCE MAXIMUM RATINGS Parameter Symbol Value Unit Junction−to−Case − Steady State RqJC 0.
80 °C/W Junction−to−Ambient − Steady State (Note 2) RqJA 38 1.
The entire application environment impacts the thermal resistance values shown, they are not constants and are only valid for the particular conditions noted.
2.
Surface−mounted on FR4 board using a 650 mm2, 2 oz.
Cu pad.
3.
Maximum current for pulses as long as 1 second is higher but is dependent on pulse duration and duty cycle.
www.
onsemi.
com V(BR)DSS 60 V RDS(ON) MAX 1.
3 mW @ 10 V 1.
7 mW @ 4.
5 V ID MAX 250 A D (5) G (4) S (1,2,3) N−CHANNEL MOSFET 1 DFN5 (SO−8FL) CASE 488AA STYLE 1 MARKING DIAGRAM D S S 5H600L S AYWZZ G D D D 5H600L ...


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