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STPSC12C065-Y

STMicroelectronics
Part Number STPSC12C065-Y
Manufacturer STMicroelectronics
Description Automotive 650V power Schottky silicon carbide diode
Published Aug 2, 2019
Detailed Description STPSC12C065-Y Automotive 650 V power Schottky silicon carbide diode $ . . 72$& $ . Features • No or negligible...
Datasheet PDF File STPSC12C065-Y PDF File

STPSC12C065-Y
STPSC12C065-Y

Overview
STPSC12C065-Y Automotive 650 V power Schottky silicon carbide diode $ .
.
72$& $ .
Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • PPAP capable • ECOPACK®2 compliant component Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible.
The minimal capacitive...


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