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STPSC20H065C-Y

STMicroelectronics
Part Number STPSC20H065C-Y
Manufacturer STMicroelectronics
Description Automotive 650V power Schottky silicon carbide diode
Published Aug 2, 2019
Detailed Description STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H06...
Datasheet PDF File STPSC20H065C-Y PDF File

STPSC20H065C-Y
STPSC20H065C-Y

Overview
STPSC20H065C-Y Automotive 650 V power Schottky silicon carbide diode A1 (1) A2 (3) K (2) A2 A1 K TO-220AB STPSC20H065CTY A2 K A1 TO-247 STPSC20H065CWY Features • No or negligible reverse recovery • Switching behavior independent of temperature • Dedicated to PFC applications • High forward surge capability • AEC-Q101 qualified • ECOPACK®2 compliant component • PPAP capable Datasheet - production data Description The SiC diode is an ultrahigh performance power Schottky diode.
It is manufactured using a silicon carbide substrate.
The wide band gap material allows the design of a Schottky diode structure with a 650 V rating.
Due to the Schottky construction, no recovery is shown at turn-...


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