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EPC2035

EPC
Part Number EPC2035
Manufacturer EPC
Description Power Transistor
Published Aug 2, 2019
Detailed Description eGaN® FET DATASHEET EPC2035 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 45 mΩ ID , 1.7 A D G S EPC2035 ...
Datasheet PDF File EPC2035 PDF File

EPC2035
EPC2035

Overview
eGaN® FET DATASHEET EPC2035 – Enhancement Mode Power Transistor VDS , 60 V RDS(on) , 45 mΩ ID , 1.
7 A D G S EPC2035 EFFICIENT POWER CONVERSION HAL Gallium Nitride’s exceptionally high electron mobility and low temperature coefficient allows very low RDS(on), while its lateral device structure and majority carrier diode provide exceptionally low QG and zero QRR.
The end result is a device that can handle tasks where very high switching frequency, and low on-time are beneficial as well as those where on-state losses dominate.
Maximum Ratings PARAMETER VALUE UNIT Drain-to-Source Voltage (Continuous) 60 VDS Drain-to-Source Voltage (up to 10,000 5 ms pulses at 125°C) 72 V ID Continuous (TA = 25°C, RθJA = 546°C/W) Pulsed (25°C, TPULSE = 300 µs) Gate-to-Source Voltage VGS Gate-to-Source Voltage 1.
7 A 24 6 V –4 TJ Operating Temperature TSTG Storage Temperature –40 to 150 °C –40 to 150 Thermal Characteristics PARAMETER TYP UNIT RθJC Thermal Resistance, Junction-to-Case 6.
5 RθJB Thermal Resistance, Junction-to-Board 65 °C/W RθJA Thermal Resistance, Junction-to-Ambient (Note 1) 100 Note 1: RθJA is determined with the device mounted on one square inch of copper pad, single layer 2 oz copper on FR4 board.
See https://epc-co.
com/epc/documents/product-training/Appnote_Thermal_Performance_of_eGaN_FETs.
pdf for details EPC2035 eGaN® FETs are supplied only in passivated die form with solder bumps Die Size: 0.
9 mm x 0.
9 mm Applications • High Speed DC-DC conversion • Wireless Power Transfer • High Frequency Hard-Switching and Soft-Switching Circuits • Lidar/Pulsed Power Applications Benefits • Ultra High Efficiency • Ultra Low RDS(on) • Ultra Low QG • Ultra Small Footprint PARAMETER Static Characteristics (TJ= 25°C unless otherwise stated) TEST CONDITIONS BVDSS IDSS IGSS Drain-to-Source Voltage Drain-Source Leakage Gate-to-Source Forward Leakage Gate-to-Source Reverse Leakage VGS = 0 V, ID = 300 µA VDS = 48 V, VGS = 0 V VGS = 5 V VGS = -4 V VGS(TH)...


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