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900N20N

Infineon
Part Number 900N20N
Manufacturer Infineon
Description Power Transistor
Published Aug 2, 2019
Detailed Description Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate ch...
Datasheet PDF File 900N20N PDF File

900N20N
900N20N

Overview
Type OptiMOSTM3 Power-Transistor Features • Optimized for dc-dc conversion • N-channel, normal level • Excellent gate charge x R DS(on) product (FOM) • Low on-resistance R DS(on) • 150 °C operating temperature • Pb-free lead plating; RoHS compliant • Qualified according to JEDEC1) for target application • Halogen-free according to IEC61249-2-21 BSZ900N20NS3 G Product Summary VDS RDS(on),max ID 200 V 90 mW 15.
2 A PG-TSDSON-8 Type BSZ900N20NS3 G Package Marking PG-TSDSON-8 900N20N Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Symbol Conditions Continuous drain current Pulsed drain current2) Avalanche energy, single pulse Reverse diode dv /dt ID I D,pulse E AS dv /dt T C=25 °C T C=100 °C T C=25 °C I D=7.
6 A, R GS=25 W Gate source voltage V GS Power dissipation P tot T C=25 °C Operating and storage temperature T j, T stg IEC climatic category; DIN IEC 68-1 1)J-STD20 and JESD22 2) see figure 3 Value 15.
2 10.
7 61 100 10 ±20 62.
5 -55 .
.
.
150 55/150/...


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