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TLD8S36AH

Taiwan Semiconductor
Part Number TLD8S36AH
Manufacturer Taiwan Semiconductor
Description Surface Mount Transient Voltage Suppressor
Published Aug 7, 2019
Detailed Description TLD8S10AH – TLD8S43AH Taiwan Semiconductor 6600W, 10V – 43V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-...
Datasheet PDF File TLD8S36AH PDF File

TLD8S36AH
TLD8S36AH

Overview
TLD8S10AH – TLD8S43AH Taiwan Semiconductor 6600W, 10V – 43V Surface Mount Transient Voltage Suppressor FEATURES ● AEC-Q101 qualified ● Junction passivation optimized design technology ● TJ =175 °C capability suitable for high reliability and automotive requirement ● Moisture sensitivity level: level 1, per J-STD-020 ● Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ● Halogen-free according to IEC 61249-2-21 ● Meets ISO7637-2 and ISO16750-2 surge specifications (varied by test conditions) ● Meets IEC 61000-4-2 (Level: 4) / ISO 10605 (Level: L4) KEY PARAMETERS PARAMETER VALUE UNIT VWM 10 – 43 V VBR PPPM (10x1,000μs) PPPM (10x10,000μs) 11.
1 – 52.
8 6600 5200 V W W TJ MAX Package 175 °C DO-218AB APPLICATIONS ● Transient Surge Protection.
● Automotive Load Dump Surge Protection.
MECHANICAL DATA ● Case: DO-218AB ● Molding compound meets UL 94V-0 flammability rating ● Terminal: Matte tin plated leads, solderable per J-STD-002 ● Meet JESD 201 class 2 whisker test ● Polarity: Uni-directional ● Weight: 2.
691g (approximately) DO-218AB ABSOLUTE MAXIMUM RATINGS (TA = 25°C unless otherwise noted) PARAMETER SYMBOL Non-repetitive peak impulse power dissipation with 10/1000μs waveform Non-repetitive peak impulse power dissipation with 10/10000μs waveform (1) Steady state power dissipation (Fig.
1) Forward Voltage at IF=100 A (2) PPPM PPPM PD VF, MAX Peak forward surge current, 8.
3 ms single half sine-wave IFSM Junction temperature TJ Storage temperature Notes: 1.
Non-repetitive current pulse per Fig.
3.
2.
Pulse test with PW=0.
3 ms TSTG VALUE 6600 5200 8 1.
8 700 -55 to +175 -55 to +175 UNIT W W W V A °C °C 1 Version: C1906 TLD8S10AH – TLD8S43AH Taiwan Semiconductor THERMAL PERFORMANCE PARAMETER Junction-to-case thermal resistance per diode Thermal Performance Note: With ideal heatsink SYMBOL RӨJC TYP 0.
8 UNIT °C/W ELECTRICAL SPECIFICATIONS (TA = 25°C unless otherwise noted) Part number Marking code Breakdown Maximum vo...


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