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N2NF10

STMicroelectronics
Part Number N2NF10
Manufacturer STMicroelectronics
Description N-CHANNEL MOSFET
Published Aug 7, 2019
Detailed Description STN2NF10 N-channel 100V - 0.23Ω - 2.4A - SOT-223 STripFET™ II Power MOSFET Features Type STN2NF10 VDSS 100V RDS(on) ...
Datasheet PDF File N2NF10 PDF File

N2NF10
N2NF10

Overview
STN2NF10 N-channel 100V - 0.
23Ω - 2.
4A - SOT-223 STripFET™ II Power MOSFET Features Type STN2NF10 VDSS 100V RDS(on) < 0.
26Ω ID 2.
4A Description This Power MOSFET is the latest development of STMicroelectronics unique “single feature size” strip-based process.
The resulting transistor shows extremely high packing density for low onresistance, rugged avalanche characteristics and less critical alignment steps therefore a remarkable manufacturing reproducibility.
Application ■ Switching application – DC-DC converters 2 3 2 1 SOT-223 Internal schematic diagram Order code Part number STN2NF10 Marking N2NF10 Package SOT-223 Packaging Tape & reel April 2007 Rev 6 1/13 www.
st.
com 13 Contents Contents STN2NF10 1 Electrical ratings .
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3 2 Electrical characteristics .
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4 2.
1 Electrical characteristics (curves) .
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6 3 Test circuit .
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9 4 Package mechanical data .
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10 5 Revision history .
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12 2/13 STN2NF10 1 Electrical ratings Table 1.
Absolute maximum ratings Symbol Parameter VDS VGS ID ID IDM (1) Drain-source voltage (VGS=0) Gate-source voltage Drain current (continuous) at TC = 25°C Drain current (continuous) at TC = 100°C Drain current (pulsed) Derating factor PTOT (2) Total dissipation at TC = 25°C EAS (3) Single pulse avalanche energy dv/dt (4) Peak diode recovery voltage slope Tj Operating junction temperature Tstg Storage temperature 1.
Pulse width limited by safe operating area 2.
This value is rated according to Rthj-amb, t < 10sec 3.
IAS = 2.
4A, VDD = 30V, Rg=4.
7Ω, starting Tj = 25°C 4.
ISD < 6A...


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