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DF2S14P2CTC

Toshiba
Part Number DF2S14P2CTC
Manufacturer Toshiba
Description ESD Protection Diodes
Published Aug 9, 2019
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2S14P2CTC DF2S14P2CTC 1. General The DF2S14P2CTC is a TVS diode (ESD ...
Datasheet PDF File DF2S14P2CTC PDF File

DF2S14P2CTC
DF2S14P2CTC

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2S14P2CTC DF2S14P2CTC 1.
General The DF2S14P2CTC is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise.
The DF2S14P2CTC has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation).
Furthermore, the DF2S14P2CTC is housed in an ultra-compact package (1.
6 mm × 0.
8 mm) to meet applications that require a small footprint.
2.
Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
3.
Features (1) Suitable for use with a 12 V signal line.
(VRWM ≤ 12.
6 V) (2) Protects devices with its high ESD performance.
(VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.
08 Ω (typ.
)) (4) Snapback characteristics realizing low clamping voltage protects semiconductor devices.
(VC = 28 V@IPP = 50 A (typ.
)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(1.
6 mm × 0.
8 mm size (Nickname: CST2C)) 4.
Packaging CST2C ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2017-07 2018-12-06 Rev.
3.
0 5.
Example of Circuit Diagram DF2S14P2CTC 6.
Quick Reference Data Characteristics Symbol Note Test Condition Min Typ.
Max Unit Working peak reverse voltage Dynamic resistance Electrostatic discharge voltage (IEC61000-4-2) (Contact) VRWM RDYN VESD (Note 1) (Note 2) (Note 3)      12.
6 V  0.
08  Ω   30 kV Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30...


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