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DF2S23P2FU

Toshiba
Part Number DF2S23P2FU
Manufacturer Toshiba
Description ESD Protection Diodes
Published Aug 9, 2019
Detailed Description ESD Protection Diodes Silicon Epitaxial Planar DF2S23P2FU DF2S23P2FU 1. General The DF2S23P2FU is a TVS diode (ESD pro...
Datasheet PDF File DF2S23P2FU PDF File

DF2S23P2FU
DF2S23P2FU

Overview
ESD Protection Diodes Silicon Epitaxial Planar DF2S23P2FU DF2S23P2FU 1.
General The DF2S23P2FU is a TVS diode (ESD protection diode) protects semiconductor devices used in mobile device interfaces and other applications to protect against static electricity and noise.
The DF2S23P2FU has realized high IPP, in order to protect a semiconductor devices from the indirect lightning stroke and the transition voltage (at the time of power activation).
Furthermore, the DF2S23P2FU is housed in an standard package (2.
5 mm × 1.
25 mm), it can be used for various applications.
2.
Applications Mobile Equipment  Smartphones  Tablets  Notebook PCs Desktop PCs Note: This product is designed for protection against electrostatic discharge (ESD) and is not intended for any other purpose, including, but not limited to, voltage regulation.
3.
Features (1) Suitable for use with a 20 V signal line.
(VRWM ≤ 21 V) (2) Protects devices with its high ESD performance.
(VESD = ±30 kV (Contact / Air) @IEC61000-4-2) (3) Low dynamic resistance protects semiconductor devices from static electricity and noise.
(RDYN = 0.
13 Ω (typ.
)) (4) Low clamping voltage characteristic protects semiconductor devices from static electricity and noise.
(VC = 30 V@IPP = 14 A (typ.
)) (5) Compact package is suitable for use in high density board layouts such as in mobile devices.
(2.
5 mm × 1.
25 mm size (Nickname: USC)) 4.
Packaging USC ©2017-2018 Toshiba Electronic Devices & Storage Corporation 1 Start of commercial production 2018-08 2018-08-07 Rev.
2.
0 5.
Example of Circuit Diagram DF2S23P2FU 6.
Quick Reference Data Characteristics Symbol Note Test Condition Min Typ.
Max Unit Working peak reverse voltage Dynamic resistance Electrostatic discharge voltage (IEC61000-4-2) (Contact) VRWM RDYN VESD (Note 1) (Note 2) (Note 3)      21  0.
13    30 V Ω kV Note 1: Recommended operating condition.
Note 2: TLP parameters: Z0 = 50 Ω, tp = 100 ns, tr = 300 ps, averaging window: t1 = 30 ns to t2 = 60 n...


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