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CGHV14800F

Cree
Part Number CGHV14800F
Manufacturer Cree
Description GaN HEMT
Published Aug 9, 2019
Detailed Description CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) h...
Datasheet PDF File CGHV14800F PDF File

CGHV14800F
CGHV14800F

Overview
CGHV14800F 800 W, 1200 - 1400 MHz, 50 V, GaN HEMT for L-Band Radar Systems Cree’s CGHV14800 is a gallium nitride (GaN) high electron mobility transistor (HEMT) designed specifically with high efficiency, high gain and wide bandwidth capabilities, which makes the CGHV14800 ideal for 1.
2 - 1.
4 GHz pulsed L-Band radar amplifier applications, such as air traffic control (ATC) radar, weather radar, penetration radars, antimissile system radars, target tracking radars and long range survelliance radars.
The GaN HEMT typically operates at 50 V, typically delivering >65% drain efficiency.
The package options are ceramic/metal flange package.
Package PN: CTGypHeV: 1444800101F7 Typical Performance Over 1.
2-1.
4 GHz (TC = 25˚C) of Demonstration Amplifier Parameter 1.
2 GHz 1.
25 GHz 1.
3 GHz 1.
35 GHz Output Power 1000 940 940 920 1.
4 GHz 910 Power Gain 15.
5 15.
2 15.
2 15.
1 15.
1 Drain Efficiency 74 73 73 69 67 Note: Measured in the CGHV14800-AMP amplifier circuit, under 100 μs pu...


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