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6N04N009

Infineon
Part Number 6N04N009
Manufacturer Infineon
Description Power-Transistor
Published Aug 13, 2019
Detailed Description IAUC120N04S6N009 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive appli...
Datasheet PDF File 6N04N009 PDF File

6N04N009
6N04N009

Overview
IAUC120N04S6N009 OptiMOS™- 6 Power-Transistor Product Summary Features • OptiMOS™ - power MOSFET for automotive applications VDS RDS(on),max ID 40 V 0.
9 m 120 A PG-TDSON-8 • N-channel - Enhancement mode - Normal Level • AEC Q101 qualified • MSL1 up to 260°C peak reflow • 175°C operating temperature • Green Product (RoHS compliant) 1 1 • 100% Avalanche tested Type IAUC120N04S6N009 Package PG-TDSON-8 Marking 6N04N009 Maximum ratings, at T j=25 °C, unless otherwise specified Parameter Continuous drain current1) Symbol Conditions I D T C=25°C, V GS=10V T C=100°C, V GS=10V2) Pulsed drain current2) Avalanche energy, single pulse2) Avalanche current, single pulse Gate source voltage Power dissipation Operating and storage temperature I D,pulse T C=25°C E AS I D=60A, R G,min=25 I AS R G,min=25 V GS - P tot T C=25°C T j, T stg - Value 120 120 480 400 60 ±20 150 -55 .
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+175 Unit A mJ A V W °C Rev.
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0 page 1 2018-09-27 IAUC120N04S6N009 Parameter Symbol Con...


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